Ion sensitive sensor with multilayer construction in the sensor region

US8519447B2 · kind B2 · utility

Assignee

• Endress+Hauser Conducta Gesellschaft fuer Mess- und Regeltechnik mbH + Co. KG · DE

Inventor

• Hendrik Zeun · Chemnitz, DE

Key dates

• Filing date: Jul 21, 2010
• Grant date: Aug 27, 2013
• Expiry date: Aug 10, 2030

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N27/414
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

An ion sensitive sensor having an EIS structure, including: a semiconductor substrate, on which a layer of a substrate oxides is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable, intermediate insulator, which is deposited on the adapting or matching layer; and an ion sensitive, sensor layer, which is applied on the intermediate insulator. The adapting or matching layer differs from the intermediate insulator and the substrate oxide in its chemical composition and/or structure. The adapting or matching layer and the ion sensitive, sensor layer each have an electrical conductivity greater than that of the intermediate insulator. There is an electrically conductive connection between the adapting or matching layer and the ion sensitive, sensor layer.