Thin-film transistor based piezoelectric strain sensor and method
US8519449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2010 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Aug 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A piezoelectric strain sensor and method thereof for detecting strain, vibration, and/or pressure. The sensor incorporates a sequence of piezoelectric and semiconductor layers in a thin-film transistor structure. The thin-film transistor structure can be configured on a flexible substrate via a low-cost fabrication technique. The piezoelectric layer generates an electric charge resulting in a modulation of a transistor current, which is a measure of external strain. The sensor can be formed as a single gate field-effect piezoelectric sensor and a dual gate field-effect piezoelectric sensor. The semiconductor layer can be configured from a nanowire array resulting in a metal-piezoelectric-nanowire field effect transistor. The single and dual gate field-effect piezoelectric sensor offer increased sensitivity and device control due to the presence of the piezoelectric layer in the transistor structure and low cost manufacturability on large area flexible substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.