Semiconductor device with junction field-effect transistor and manufacturing method of the same
US8519452B2 · kind B2 · utility
3Cited by
3References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 29, 2011 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Nov 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A semiconductor device with a JFET is disclosed. The semiconductor device includes a trench and a contact embedded layer formed in the trench. A gate wire is connected to the contact embedded layer, so that the gate wire is connected to an embedded gate layer via the contact embedded layer. In this configuration, it is possible to downsize a contact structure between the embedded gate layer and the gate wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.