Semiconductor light detecting element with grooved substrate
US8519501B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2012 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | May 22, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A back-surface-incidence semiconductor light element includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of a first conductivity type on the semiconductor substrate; a light absorbing layer on the first semiconductor layer; a second semiconductor layer on the light absorbing layer; and an impurity diffusion region of a second conductivity type in a portion of the second semiconductor layer. A region including a p-n junction between the first semiconductor layer and the impurity diffusion region, and extending through the light absorbing layer, is a light detecting portion that detects light incident on a back surface of the semiconductor substrate. A groove in the back surface of the semiconductor substrate surrounds the light detecting portion, as viewed in plan.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.