Patent · US Active

Method for producing a control device for operating a radiation-emitting semiconductor component

US8519633B2 · kind B2 · utility

0Cited by

12References

10Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Thomas Zahner · Schongau, DE
Florian Dams · Regensburg, DE
Peter Holzer · Obertraubling, DE
Stefan Groetsch · Bad Abbach, DE

Key dates

Filing date	Feb 15, 2008
Grant date	Aug 27, 2013
Priority date	—
Expiry date	May 17, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH05B45/14
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A pulsed electric operating current that rises during a pulse duration is generated for operating at least one radiation-emitting semiconductor component. For this purpose, in a method for producing a control device for operating the at least one radiation-emitting semiconductor component, a temporal profile of a thermal impedance representative of the at least one radiation-emitting semiconductor component is determined. A profile of the electric operating current that is to be set is determined depending on the determined temporal profile of the thermal impedance. The control device is furthermore designed such that the profile of the operating current that is to be set is set in each case during the pulse duration.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.