Metallic silicide resistive thermal sensor and method for manufacturing the same
US8519818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2012 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Jun 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C1/14
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A metallic silicide resistive thermal sensor has a body, a conductive wire and multiple electrodes. The body has multiple etching windows formed on the body and a cavity formed under the etching windows. The etching windows separate the body into a suspended part and multiple connection parts. The conductive wire is formed on the suspended part and the connection parts and is made of metallic silicide. The electrodes are formed on the body and are electrically connected to the conductive wire. The metallic silicide is compatible for common CMOS manufacturing processes. The cost for manufacturing the resistive thermal sensor decreases. The metallic silicon is stable at high temperature. Therefore, the performance of the resistive thermal sensor in accordance with the present invention is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.