Image sensor devices having dual-gated charge storage regions therein
US8520104B2 · kind B2 · utility
11Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2009 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Feb 19, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01S17/894
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.