Magnetoresistive element and magnetic memory
US8520433B1 · kind B1 · utility
27Cited by
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20Claims
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Key dates
| Filing date | Sep 20, 2012 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Sep 20, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, at least one of the first magnetic layer and the second magnetic layer including a magnetic film of MnxAlyGez (10 atm %≦x≦44 atm %, 10 atm %≦y≦65 atm %, 10 atm %≦z≦80 atm %, x+y+z=100 atm %).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.