Low-rate electrochemical etch of thin film metals and alloys
US8524068B2 · kind B2 · utility
146Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2011 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Jan 2, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D3/20
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of the present invention include systems and methods for low-rate electrochemical (wet) etch that use a net cathodic current or potential. In particular, some embodiments achieve controlled etch rates of less than 0.1 nm/s by applying a small net cathodic current to a substrate as the substrate is submerged in an aqueous electrolyte. Depending on the embodiment, the aqueous electrolyte utilized may comprise the same type of cations as the material being etched from the substrate. Some embodiments are useful in etching thin film metals and alloys and fabrication of magnetic head transducer wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.