Patent · US Active

Method for separating a semiconductor layer from a substrate by irradiating with laser pulses

US8524573B2 · kind B2 · utility

1Cited by

30References

1Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Stephan Kaiser · Regensburg, DE
Volker Harle · Hemau, DE
Berthold Hahn · Hemau, DE

Key dates

Filing date	Jan 27, 2004
Grant date	Sep 3, 2013
Priority date	—
Expiry date	Jan 4, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/018
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a semiconductor component, in which a semiconductor layer is separated from a substrate by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile with a flank slope is chosen to be gentle enough to prevent cracks in the semiconductor layer that arise as a result of thermally induced lateral stresses during the separation of semiconductor layer and substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.