Fabrication and mask design methods using spatial frequency sextupling technique
US8524605B1 · kind B1 · utility
32Cited by
1References
11Claims
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Key dates
| Filing date | Apr 16, 2012 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Apr 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Self-aligned sextuple patterning (SASP) processes and mask design methods for the semiconductor manufacturing are invented. The inventions pertain to methods of forming one and/or two dimensional features on a substrate having the feature density increased to six times of what is possible using the standard optical lithographic technique; and methods to release the overlay requirement when patterning the critical layers of semiconductor devices. Our inventions provide production-worthy methods for the semiconductor industry to continue device scaling beyond 15 nm (half pitch).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.