Method of fabricating semiconductor device
US8524609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2011 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Nov 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0273
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An aspect of the present embodiment, there is provided a method of fabricating a semiconductor device including providing a film to be processed above a semiconductor substrate, providing a negative-type resist and a photo-curable resist in order, pressing a main surface of a template onto the photo-curable resist, the main surface of the template having a concavo-convex pattern with a light shield portion provided on at least a part of a convex portion, irradiating the template with light from a back surface of the template, developing the negative-type resist and the photo-curable resist so as to print the concavo-convex pattern of the template on the negative-type resist and the photo-curable resist, and etching the film to be processed by using the concavo-convex pattern printed on the negative-type resist and the photo-curable resist as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.