Method and apparatus for inline deposition of materials on a non-planar surface
US8524611B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 3, 2010 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Jan 6, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/53187
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In manufacturing a semiconductor device, a first chamber is provided. An opening couples the first chamber to a first environment through which at least one substrate can pass. A first seal environmentally isolates the first chamber from the first environment. A process chamber is coupled to the first chamber. Another seal environmental isolates the first and the process chambers. The substrate is placed within the first chamber, and the first chamber and the outside environment are isolated. The second opening is opened, and the substrate moves into the semiconductor process chamber. The first chamber is again environmentally isolated from the second volume. A semiconductor processing step is performed on the substrate within the processing chamber. While the substrate is processed, the substrate is rotated and translated through the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.