Patent · US Active

Silicon-based hardmask composition and process of producing semiconductor integrated circuit device using the same

US8524851B2 · kind B2 · utility

12Cited by
1References
15Claims
0Family size

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Key dates

Filing dateJul 12, 2010
Grant dateSep 3, 2013
Priority date—
Expiry dateJul 28, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02282
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1:{(SiO1.5—Y—SiO1.5)x(R3SiO1.5)y(XSiO1.5)z}(OH)e(OR6)f  (1).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.