Semiconductor device and method for manufacturing same
US8525184B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 22, 2012 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Jun 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device.In the present invention, the semiconductor device includes an n+-type GaN substrate 1 having a GaN layer that is in ohmic contact with a supporting substrate, a FET having an n−-type GaN drift layer 2 in a first region R1, and an SBD having an anode electrode in a second region R2, the anode electrode being in Schottky contact with the d−-type GaN drift layer 2. The FET and the SBD are arranged in parallel. A drain electrode D of the FET and a cathode electrode C of the SBD are formed on the back of the n+-type GaN substrate 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.