Process for forming a planar diode using one mask
US8525222B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Mar 25, 2005 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Nov 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.