Semiconductor body having a terminal cell
US8525266B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2012 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Mar 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A semiconductor body comprising a first connection for feeding an upper supply potential and a first and a second terminal cell, which are situated at a distance from each other. The semiconductor body further comprises an arrester structure, which is arranged between the first and second terminal cells in a p-doped substrate. The arrester structure comprises a first and a second p-channel field-effect transistor structure, each of which is set in a respective n-doped well substantially parallel to the first and second terminal cells, and a diode structure with a p-doped region set in a further n-doped well between the n-doped wells of the first and second p-channel field-effect transistor structures. The diode structure is designed to activate the first and second p-channel field-effect transistor structure as arrester elements during an electrostatic discharge in the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.