Materials, systems and methods for optoelectronic devices

US8525287B2 · kind B2 · utility

Assignee

• INVISAGE TECHNOLOGIES, INC. · US

Inventors

• Hui Tian · Cupertino, US
• Edward Hartley Sargent · Toronto, CA

Key dates

• Filing date: Aug 24, 2011
• Grant date: Sep 3, 2013
• Expiry date: Aug 24, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.