Schottky diode with improved high current behavior

US8525288B2 · kind B2 · utility

Assignee

• Eris Technology Corporation · TW

Inventors

• Michael Reschke · Potsdam, DE
• Hans-Jurgen Hillemann · Beelitz, DE
• Klaus Gunther · Voerde, DE

Key dates

• Filing date: Apr 19, 2010
• Grant date: Sep 3, 2013
• Expiry date: Mar 20, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/051

Abstract

In the diffusion region (3) of the second conductivity mode, a more highly doped region of the same conductivity mode (5) is introduced in such a manner that the region of the first conductivity mode (2) which is covered by the metal silicide (9) and of the second conductivity mode (3) are connected in a conductive manner. The region (3) of the second conductivity mode is diffused in such a manner that it reaches the more highly doped region (1) of the first doping type (1), with an outward diffusion of the doping from the more highly doped substrate layer (1) into the more weakly doped layer (2) of the same conductivity mode in the direction of the semiconductor surface taking place at the same time.