Photovoltaic device including semiconductor nanocrystals

US8525303B2 · kind B2 · utility

Assignee

• Massachusetts Institute of Technology · US

Inventors

• Alexi C. Arango · Somerville, US
• Vladimir Bulovic · Lexington, US
• Vanessa Wood · Cambridge, US
• Moungi G. Bawendi · Cambridge, US

Key dates

• Filing date: Jun 25, 2007
• Grant date: Sep 3, 2013
• Expiry date: Dec 22, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

A photovoltaic device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.