Patent · US Active

Method and device for evaluating electric performances of an FDSOI transistor

US8525528B2 · kind B2 · utility

2Cited by
3References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 20, 2010
Grant dateSep 3, 2013
Priority date—
Expiry dateFeb 15, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/2642
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method for evaluating the electric performances of an FDSOI transistor, including the steps of: measuring capacitance and/or conductance of the FDSOI transistor, by applying a voltage VBG>0 on a substrate composed of semiconductor of the FDSOI transistor when the FDSOI transistor is NMOS or a voltage VBG<0 on the substrate composed of semiconductor of the FDSOI transistor when the FDSOI transistor is PMOS, depending on a voltage VFG applied between a gate and source and drain regions of the FDSOI transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.