Patent · US Active

Perovskite semiconductor thin film and method of making thereof

US8529797B2 · kind B2 · utility

13Cited by
1References
10Claims
0Family size

Inventor

Key dates

Filing dateJun 1, 2011
Grant dateSep 10, 2013
Priority date—
Expiry dateJul 7, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/822
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Perovskite semiconductor thin films and the method of making Perovskite semiconductor thin films are disclosed. Perovskite semiconductor thin films were deposited on inexpensive substrates such as glass and ceramics. CsSnI3 films contained polycrystalline domains with typical size of 300 nm and larger. It is confirmed experimentally that CsSnI3 compound in its black phase is a direct band-gap semiconductor, consistent with the calculated band structure from the first principles.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.