Fabrication of nanovoid-imbedded bismuth telluride with low dimensional system

US8529825B2 · kind B2 · utility

Assignees

• National Institute of Aerospace Associates · US
• THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATION OF NASA. · US

Inventors

• Sang-Hyon Chu · Newport News, US
• Sang H. Choi · Poquoson, US
• Jae-Woo Kim · Daejeon, KR
• Yeonjoon Park · Yorktown, US
• James R. Elliott · Vesuvius, US
• Glen C. King · Yorktown, US
• Diane M. Stoakley · Yorktown, US

Key dates

• Filing date: Dec 3, 2010
• Grant date: Sep 10, 2013
• Expiry date: Jun 6, 2031

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B64U2101/35
• WIPO field: Transport
• WIPO sector: Mechanical engineering

Abstract

A new fabrication method for nanovoids-imbedded bismuth telluride (Bi—Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi—Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions.