Method for manufacturing light emitting diode
US8530252B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2011 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Oct 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing light emitting diodes includes steps of: providing a base have an upper conductive layer and a lower conductive layer on a top face and a bottom face thereof, respectively; forming a plurality of through holes in the base; defining a plurality of grooves to divide the upper and lower conductive layers into discrete strips; forming a connection layer on an inner circumferential face of each hole to connect the opposite strips of the upper and lower conductive layers; filling a supporting layer in an upper portion of each hole; forming a reinforcing layer on the supporting layer and the upper conductive layer; fixing chips on the reinforcing layer and electrically connecting the chips with the strips of the upper conductive layer; forming an encapsulant on the reinforcing layer; and cutting the base into individual LEDs along the holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.