Silicon-based thin film solar cell and method for manufacturing same
US8530267B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2009 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Mar 4, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A method for manufacturing a silicon-based thin film solar cell including a crystalline silicon photoelectric conversion unit which contains a p-type layer (4p), a crystalline i-type silicon photoelectric conversion layer (4ic), and an n-type layer (4nc) stacked in this order from a transparent substrate side is provided. In one example, an n-type silicon-based thin film layer (4na) is formed on the crystalline i-type silicon photoelectric conversion layer (4ic), the n-type silicon-based thin film layer (4na) having an n-type silicon alloy layer having a film thickness of 1-12 nm and being in contact with the crystalline i-type silicon photoelectric conversion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.