Patent · US Active

Method for manufacturing a microelectronic device and a microelectronic device thus manufactured

US8530276B2 · kind B2 · utility

3Cited by

22References

12Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Thierry Hilt · Barraux, FR
Herve Boutry · Vinay, FR
Remy Franiatte · Voiron, FR
Stephane Moreau · Saint-Égrève, FR

Key dates

Filing date	Apr 26, 2011
Grant date	Sep 10, 2013
Priority date	—
Expiry date	Oct 16, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/1461
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention pertains to a method for manufacturing a microelectronic device on a substrate comprising at least one first electrical component and one second electrical component distributed respectively in first and second levels stacked one on top of the other on the substrate, this method comprising:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.