Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
US8530290B2 · kind B2 · utility
20Cited by
24References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2010 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Jan 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
Abstract
A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having a first impurity formed at edges of the source and drain regions, and optionally, in the channel region; a gate insulating layer insulating the semiconductor layer; a gate electrode insulated from the semiconductor layer by the gate insulating layer; and source and drain electrodes electrically connected to the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.