Method of fabricating semiconductor device
US8530303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Dec 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/017
Abstract
A method of fabricating a semiconductor includes providing a substrate having a first region and a second region defined therein, forming a first gate and a first source and drain region in the first region and forming a second gate and a second source and drain region in the second region, forming an epitaxial layer in the second source and drain region, forming a first metal silicide layer in the first source and drain region, forming an interlayer dielectric layer on the first region and the second region, forming a plurality of contact holes exposing the first metal silicide layer and the epitaxial layer while penetrating the interlayer dielectric layer, forming a second metal silicide layer in the exposed epitaxial layer, and forming a plurality of contacts contacting the first and second metal silicide layers by filling the plurality of contact holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.