Methods of fabricating semiconductor devices having various isolation regions
US8530329B2 · kind B2 · utility
6Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2011 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Mar 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes forming a first trench and a second trench in a semiconductor substrate, forming a first insulator to completely fill the first trench, the first insulator covering a bottom surface and lower sidewalls of the second trench and exposing upper sidewalls of the second trench, and forming a second insulator on the first insulator in the second trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.