Vertical cavity surface emitting laser and manufacturing method thereof
US8530358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2011 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Jan 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention discloses a manufacturing method of vertical cavity surface emitting laser. The method includes following steps: providing a substrate; forming an epitaxial layer stack including an aluminum-rich layer; forming an ion-doping mask including a ring-shaped opening; doping ions in the epitaxial layer stack through the ring-shaped opening and forming a ring-shaped ion-doped region over the aluminum-rich layer; forming an etching mask on the ion-doping mask for covering the ring-shaped opening of the ion-doping mask; etching the epitaxial layer stack through the etching mask and ion-doping mask for forming an island platform; oxidizing the aluminum-rich layer for forming a ring-shaped oxidized region. In addition, the present invention also discloses a vertical cavity surface emitting laser manufactured by the above mentioned method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.