LED chip

US8530923B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Matthias Sabathil · Regensburg, DE
• Lutz Hoeppel · Alteglofsheim, DE
• Andreas Weimar · Regensburg, DE
• Karl Engl · Niedergebraching, DE
• Johannes Baur · Regensburg, DE

Key dates

• Filing date: Apr 28, 2009
• Grant date: Sep 10, 2013
• Expiry date: Apr 28, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8581

Abstract

A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 μm. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.