Solid-state image pickup element, method of manufacturing the same, and electronic apparatus
US8530945B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2011 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Aug 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
A solid-state image pickup element includes: a photoelectric conversion region formed in a semiconductor substrate; an electric charge holding region formed in the semiconductor substrate for holding electric charges accumulated in the photoelectric conversion region until the electric charges are read out; a transfer gate formed on the semiconductor substrate for transferring electric charges generated by photoelectric conversion in the photoelectric conversion region to the electric charge holding region, and a light blocking film formed on an upper surface of the transfer gate. In this case, a portion between the semiconductor substrate and the light blocking film is thinly formed as a light made incident to the photoelectric conversion region has a longer wavelength in a wavelength region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.