Patent · US Active

Piezo-phototronic effect devices

US8530983B2 · kind B2 · utility

0Cited by

0References

14Claims

0Family size

Assignee

Georgia Tech Research Corporation · US

Inventors

Zhong Lin Wang · Marietta, US
Qing Yang · Nanhu, CN

Key dates

Filing date	Oct 4, 2011
Grant date	Sep 10, 2013
Priority date	—
Expiry date	Oct 4, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10F77/1437
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.