Semiconductor component with isolation trench intersections

US8530999B2 · kind B2 · utility

Assignee

• X-FAB SEMICONDUCTOR FOUNDRIES GMBH · DE

Inventors

• Ralf Lerner · Erfurt, DE
• Uwe Eckoldt · Hohenfelden, DE

Key dates

• Filing date: Jun 19, 2009
• Grant date: Sep 10, 2013
• Expiry date: Jun 19, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76264
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor component with straight insulation trenches formed in a semiconductor material providing semiconductor areas laterally insulated from each other. Each insulation trench has a uniform width along its longitudinal direction represented by a central line. The semiconductor component has an intersecting area into which at least three of the straight insulation trenches lead. A center of the intersecting area is defined as a point of intersection of the continuations of the center lines. A central semiconductor area disposed in the intersecting area is connected with one of the semiconductor areas and contains the center of the intersecting area.