Contact plug structure, semiconductor device, and method for forming contact plug
US8531033B2 · kind B2 · utility
5Cited by
2References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2010 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Oct 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact plug structure formed on a contact hole of an insulating layer of a semiconductor device includes a metal silicide layer formed on a bottom part of the contact hole of the insulating layer, a manganese oxide layer formed on the metal silicide layer in the contact hole, and a buried copper formed on the manganese oxide layer which substantially fills the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.