Image sensor with vertical transfer gate

US8531567B2 · kind B2 · utility

Assignee

• STMicroelectronics (Crolles 2) SAS · FR

Inventors

• Francois Roy · Seyssinet-Pariset, FR
• Frédéric Barbier · Grenoble, FR

Key dates

• Filing date: Oct 22, 2010
• Grant date: Sep 10, 2013
• Expiry date: Jul 20, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/813

Abstract

An image sensor including a first pixel positioned between second and third pixels, each of the first, second and third pixels comprising a photodiode region surrounded by an isolation trench; a first charge transfer gate comprising a first column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and second pixels, the first column electrode being configured to receive a first transfer voltage signal; and a second charge transfer gate including a second column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and third pixels, the second column electrode being configured to receive a second transfer voltage signal.