Generating and exploiting an asymmetric capacitance hysteresis of ferroelectric MIM capacitors
US8531862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2009 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Aug 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an electric component comprising at least one first MIM capacitor having a ferroelectric insulator with a dielectric constant of at least 100 between a first capacitor electrode of a first electrode material and a second capacitor electrode of a second electrode material. The first and second electrode materials are selected such that the first MIM capacitor exhibits, as a function of a DC voltage applicable between the first and second electrodes, an asymmetric capacitance hysteresis that lets the first MIM capacitor, in absence of the DC voltage, assume one of at least two possible distinct capacitance values, in dependence on a polarity of a switching voltage last applied to the capacitor, the switching voltage having an amount larger than a threshold-voltage amount. The invention is applicable for ESD sensors, memories and high-frequency devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.