Plasma etching method
US8535551B2 · kind B2 · utility
1Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2008 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | May 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method includes plasma-etching a silicon oxide layer through a mask using a process gas, the process gas containing oxygen gas and a fluorohydrocarbon shown by the formula (1), CxHyFz, wherein x is an integer from 4 to 6, y is an integer from 1 to 4, and z is a positive integer, provided that (y+z) is 2x or less. A contact hole having a very small diameter and a high aspect ratio can be formed in a substantially vertical shape without necking by plasma-etching the silicon oxide layer using a single process gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.