Method for fabricating semiconductor power device
US8536003B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2011 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Jun 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor power device includes the following steps. First, a substrate having thereon at least a semiconductor layer and a pad layer is provided. Then, at least a trench is etched into the pad layer and the semiconductor layer followed by depositing a dopant source layer in the trench and on the pad layer. A process is carried out thermally driving in dopants of the dopant source layer into the semiconductor layer. A rapid thermal process is performed to mend defects in the dopant source layer and defects between the dopant source layer and the semiconductor layer. Finally, a polishing process is performed to remove the dopant source layer from a surface of the pad layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.