Method for fabricating semiconductor power device
US8536004B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2011 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Jun 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor power device includes the following steps. First, a substrate having at least a semiconductor layer and a pad layer thereon is provided. At least a trench is etched into the pad layer and the semiconductor layer. Then, a dopant source layer is deposited in the trench and on the pad layer followed by thermally driving in dopants of the dopant source layer into the semiconductor layer. A polishing process is performed to remove the dopant source layer from a surface of the pad layer and a thermal oxidation process is performed to eliminate micro-scratches formed during the polishing process. Finally, the pad layer is removed to expose the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.