Semiconductor integrated circuit device and manufacturing method thereof
US8536005B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2011 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Jan 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
Various methods are proposed for forming a gate insulation film, a metal gate layer, and others separately in an N-channel region and a P-channel region of an integrated circuit device having a CMIS or CMOS structure using a metal gate. One of the problems of the methods however has been that the process becomes complex. The present invention is that, in a manufacturing method of a CMOS integrated circuit device, a titanium-based nitride film for adjusting the electrical properties of a high-permittivity gate insulation film before a gate electrode film is formed includes a lower film containing a comparatively large quantity of titanium and an upper film containing a comparatively large quantity of nitrogen in an N-channel region and a P-channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.