Patent · US Active

Nitride-based light-emitting device

US8536565B2 · kind B2 · utility

1Cited by

15References

17Claims

0Family size

Assignee

Epistar Corporation · TW

Inventors

Chen Ou · Hsinchu, TW
Wen-Hsiang Lin · Taipei, TW
Shih-Kuo Lai · Hsinchu, TW

Key dates

Filing date	Mar 11, 2011
Grant date	Sep 17, 2013
Priority date	—
Expiry date	Feb 18, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/815
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.