Electronic device having spatially inverted thin film transistors
US8536579B2 · kind B2 · utility
23Cited by
18References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2008 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Nov 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
The invention relates to an electronic device including a sequence of a first thin film transistor (TFT) and a second TFT, the first TFT including a first set of electrodes separated by a first insulator, the second TFT comprising a second set of electrodes separated by a second insulator, wherein the first set of electrodes and the second set of electrodes are formed from a first shared conductive layer and a second shared conductive layer, the first insulator and the second insulator being formed by a shared dielectric layer. The invention further relates to a method of manufacturing an electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.