Patent · US Active

Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays

US8536618B2 · kind B2 · utility

15Cited by

7References

24Claims

0Family size

Assignee

The Regents of the University of California · US

Inventors

Jacob J. Richardson · Lompoc, US
Daniel Bryce Thompson · Walnut Creek, US
Ingrid Koslow · Regensburg, DE
Jun Seok Ha · Seoul, KR
Frederick F. Lange · Lompoc, US
Steven P. DenBaars · Goleta, US
Shuji Nakamura · Goleta, US

Key dates

Filing date	Nov 3, 2010
Grant date	Sep 17, 2013
Priority date	—
Expiry date	Sep 18, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/832
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.