Patent · US Active

Integrated circuit including a hetero-interface and self adjusted diffusion method for manufacturing the same

US8536620B2 · kind B2 · utility

3Cited by

0References

9Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Henning Riechert · Riemerling, DE
Walter M. Weber · Laguna Hills, US

Key dates

Filing date	Sep 30, 2008
Grant date	Sep 17, 2013
Priority date	—
Expiry date	Nov 2, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/822
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

An integrated circuit including a hetero-interface and a manufacturing method thereof is disclosed. One embodiment includes forming a hetero-structure including a hetero-interface at a junction between a first region and a second region, and, thereafter introducing a material into the first region and at least up to the hetero-interface, wherein a diffusion constant of the material is higher in the first region than in the second region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.