Semiconductor device and power supply apparatus

US8536622B2 · kind B2 · utility

Assignee

• FUJITSU SEMICONDUCTOR LIMITED · JP

Inventors

• Yoshihiro Takemae · Tokyo, JP
• Tsutomu Hosoda · Kawasaki, JP

Key dates

• Filing date: Mar 5, 2013
• Grant date: Sep 17, 2013
• Expiry date: Mar 5, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/0603
• WIPO field: Control
• WIPO sector: Instruments

Abstract

A semiconductor device includes a first transistor including a GaN-based semiconductor stacked structure formed over a substrate, a first gate electrode having a plurality of first fingers over the semiconductor stacked structure, a plurality of first drain electrodes provided along the first fingers, and a plurality of first source electrodes provided along the first fingers; a second transistor including the semiconductor stacked structure, a second gate electrode having a plurality of second fingers over the semiconductor stacked structure, the second drain electrodes provided along the second fingers, and a plurality of second source electrodes provided along the second fingers; a drain pad provided over or under the first drain electrodes, and coupled to the first drain electrodes; a source pad provided over or under the second source electrodes, and coupled to the second source electrodes; and a common pad coupled to the first source electrodes and the second drain electrodes.