I-shape floating gate for flash memory device and fabricating the same
US8536639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2011 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Nov 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
The present invention discloses a floating gate structure of a flash memory device and a method for fabricating the same, which relates to a nonvolatile memory in a manufacturing technology of an ultra-large-scaled integrated circuit. In the invention, by modifying a manufacturing of a floating gate in the a standard process for the flash memory, that is, by adding three steps of deposition, two steps of etching and one step of CMP, an -shaped floating gate is formed. In addition to these steps, all the other steps are the same as those of the standard process for the flash memory process. By the invention, a coupling ratio may be improved effectively and a crosstalk between adjacent devices may be lowered, without adding additional photomasks and barely increasing a process complexity, which are very important to improve programming speed and reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.