Deuterated film encapsulation of nonvolatile charge trap memory device
US8536640B2 · kind B2 · utility
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4References
14Claims
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Key dates
| Filing date | Sep 26, 2007 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | May 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
Abstract
A nonvolatile charge trap memory device with deuterium passivation of charge traps and method of manufacture. Deuterated gate layer, deuterated gate cap layer and deuterated spacers are employed in various combinations to encapsulate the device with deuterium sources proximate to the interfaces within the gate stack and on the surface of the gate stack where traps may be present.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.