Patent · US Active

Method of manufacturing a semiconductor device and semiconductor devices resulting therefrom

US8536662B2 · kind B2 · utility

2Cited by

2References

7Claims

0Family size

Assignees

IMEC · BE
Katholieke Universiteit Leuven, KU LEUVEN R&D · BE

Inventors

Ann Witvrouw · Herent, BE
Luc Haspeslagh · Dilbeek, BE
Bin Guo · Nanhu, CN
Simone Severi · Leuven, BE
Gert Claes · Leuven, BE

Key dates

Filing date	Nov 29, 2010
Grant date	Sep 17, 2013
Priority date	—
Expiry date	Dec 22, 2031

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81B2201/0264
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method is disclosed for manufacturing a semiconductor device, including providing a substrate comprising a main surface with a non flat topography, the surface comprising at least one substantial topography variation, forming a first capping layer over the main surface such that, during formation of the first capping layer, local defects in the first capping layer are introduced, the local defects being positioned at locations corresponding to the substantial topography variations and the local defects being suitable for allowing a predetermined fluid to pass through. Associated membrane layers, capping layers, and microelectronic devices are also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.