Image sensor package and fabrication method thereof
US8536672B2 · kind B2 · utility
14Cited by
0References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2011 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Mar 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An image sensor package includes an image sensor die having an active side and a backside, wherein an image sensor device region and a bond pad are provided on the active side. A through-silicon-via (TSV) structure extending through the thickness of the image sensor die is provided to electrically connect the bond pad. A multi-layer re-distributed interconnection structure is provided on the backside of the image sensor die. A solder mask or passivation layer covers the multi-layer re-distributed interconnection structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.